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Title: Ionizing-radiation effects on phosphorus implanted n+ polygate mos capacitors with thin gate oxides
Authors: Kelleher, A. ×
Heyns, Marc
Wulf, F.
Lane, W. #
Issue Date: Dec-1992
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Nuclear Science vol:39 issue:6 pages:2004-2011
Abstract: Radiation effects on phosphorus implanted N+ polygate MOS capacitors with a 15 nm oxide grown at different temperatures are investigated. The dependence of the radiation hardness of thin gate oxides on the oxidation temperature as a function of the irradiation bias is investigated and the results obtained are compared with those of previous studies for both thick and thin oxides. The oxide charge build-up depends on the phosphorus concentration. To explain the measured effects, the physical mechanisms of trapped hole tunnel annealing are discussed.
URI: 
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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