Institute of physics conference series
Publication date:
1989-01-01
Pages:
461 -
466
Publisher:
Iop publishing ltd
Author:
Vanhellemont, J
Bender, H ; Claeys, Corneel
Keywords:
rod-like defects, silicon, generation, model
Abstract:
The homogeneous nucleation of dislocations in silicon by the direct condensation of self-interstitials is discussed. A two-step nucleation mechanism is proposed that allows to understand both low and high temperature observations.