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Title: Hot-carrier degradation of nmosts stressed at 4.2-k
Authors: Simoen, E ×
Claeys, Cor #
Issue Date: Apr-1993
Publisher: Pergamon-elsevier science ltd
Series Title: Solid-state electronics vol:36 issue:4 pages:527-532
Abstract: Results of a systematic study of the degradation behaviour of nMOSTs stressed at 4.2 K will be reported. It will be shown that the stress-induced changes can be classified in reversible and irreversible (permanent) degradation, which strongly depend on the operation conditions during stress. The reversible changes are mainly related to hole-trapping in the body of the transistor and are accompanied by a decrease of the threshold voltage and a small transconductance overshoot. The effect of Channel Hot Carrier (CHC) stress on the typical 4.2 K anomalies (kink/hysteresis) will also be addressed and briefly discussed in view of recently published models.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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