Title: Secondary ion mass-spectrometry spreading resistance profiling study on the outdiffusion from polycrystalline and monocrystalline cobaltsilicide
Authors: Elst, K ×
Vandervorst, Wilfried
Clarysse, T
Eichhammer, W
Maex, Karen #
Issue Date: Jan-1992
Publisher: Amer inst physics
Series Title: Journal of vacuum science & technology b vol:10 issue:1 pages:524-532
Abstract: The aim of the present work is to investigate the outdiffusion of implanted boron from polycrystalline CoSi2 overlayers into silicon. A detailed investigation is carried out on the secondary ion mass spectrometry (SIMS) quantification problems (matrix effects, interface roughness) applied to the determination of outdiffusion lengths and interface concentrations on mono and polycrystalline CoSi2 overlayers. Comparative studies using spreading resistance profiling (SRP) are performed to assess the electrical performance of the outdiffused samples. The similarity in the behavior with polycrystalline silicon has led to the incorporation of outdiffusion from poly CoSi2 into poly-Si models.
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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