Analysis of 2-MeV electron-irradiation induced degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Hayama, Kiyoteru × Takakura, Kenichiro Ohyama, Hidenori Rafi, Joan Marc Mercha, Abdelkarim Simoen, Eddy Claeys, Corneel #
Ieee-inst electrical electronics engineers inc
IEEE Transactions on Nuclear Science vol:53 issue:4 pages:1939-1944
The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.