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Title: Analysis of 2-MeV electron-irradiation induced degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Authors: Hayama, Kiyoteru ×
Takakura, Kenichiro
Ohyama, Hidenori
Rafi, Joan Marc
Mercha, Abdelkarim
Simoen, Eddy
Claeys, Corneel #
Issue Date: Aug-2006
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Nuclear Science vol:53 issue:4 pages:1939-1944
Abstract: The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.
URI: 
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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