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Title: Simple method for the determination of the interface trap density at 77-k in fully depleted accumulation mode soi mosfets
Authors: Martino, Ja ×
Simoen, E
Magnusson, U
Rotondaro, Alp
Claeys, Cor #
Issue Date: Jun-1993
Publisher: Pergamon-elsevier science ltd
Series Title: Solid-state electronics vol:36 issue:6 pages:827-832
Abstract: Si-SiO2 interface trap densities have a dominant impact on the electrical performance of MOS devices and are playing a crucial role in the understanding of the underlying device physics, For bulk MOSFETs a large variety of techniques are applicable to determine the interface trap density. Most of them remain valid for low temperature device operation. For SOI MOSFETs however, transient effects have to be taken into account. This paper discusses a new and simple technique, based on the threshold voltage shift as a function of the operating temperature, to determine the interface trap density in fully depleted accumulation mode SOI devices operating at cryogenic temperature. The validity of the technique will be demonstrated for 77 K device operation.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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