Semiconductor science and technology vol:6 issue:9 pages:905-911
The model presented in the preceding paper is applied to the case of a Si metal-oxide-semiconductor transistor. As will be shown, the drain current transients typically observed in the kink region at liquid helium temperatures can be explained by the forced depletion layer formation mechanism, i.e. by considering the substrate current induced build-up of the depletion charge at the drain, through shallow impact ionization and capture. Both the transient and hysteresis behaviour are described accurately by the time constant defined in the preceding paper , in the region of non-zero substrate current.