Title: Optimum MOS power matching by exploiting non-quasistatic effect
Authors: Janssens, Johan ×
Steyaert, Michel #
Issue Date: Apr-1999
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:35 issue:8 pages:672-673
Abstract: Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance R-S. It is shown how this matching technique can be refined by incorporating the nonquasistatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedance R-S to the intrinsic gate resistance embodying the non-quasistatic effect.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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