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Title: Low temperature noise spectroscopy of 0.1 mu m partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
Authors: Lartigau, I ×
Routoure, J. M
Guo, W
Cretu, B
Carin, R
Mercha, A
Claeys, Corneel
Simoen, E #
Issue Date: May-2007
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:101 issue:10 pages:-
Abstract: The variations of the low frequency noise versus temperature have been used to characterize the traps at the Si/SiO2 interface and in the depletion layer of partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors obtained from recent 0.1 mu m processes. For this technology, it is shown that 1/f noise and Lorentzians do not have the same physical origin. Moreover, an additional implantation, which is performed to control the short-channel effects, is shown to increase trap densities in the depletion layer and at the Si/SiO2 interface. (c) 2007 American Institute of Physics.
URI: 
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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