Low temperature noise spectroscopy of 0.1 mu m partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
Lartigau, I × Routoure, J. M Guo, W Cretu, B Carin, R Mercha, A Claeys, Corneel Simoen, E #
Amer inst physics
Journal of Applied Physics vol:101 issue:10 pages:-
The variations of the low frequency noise versus temperature have been used to characterize the traps at the Si/SiO2 interface and in the depletion layer of partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors obtained from recent 0.1 mu m processes. For this technology, it is shown that 1/f noise and Lorentzians do not have the same physical origin. Moreover, an additional implantation, which is performed to control the short-channel effects, is shown to increase trap densities in the depletion layer and at the Si/SiO2 interface. (c) 2007 American Institute of Physics.