This item still needs to be validated !
ITEM METADATA RECORD
Title: Evidence for an alternative, hole-trapping related random telegraph signal mechanism in n-channel silicon-on-insulator metal-oxide-semiconductor transistors
Authors: Simoen, E ×
Claeys, Cor #
Issue Date: Feb-1993
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:62 issue:8 pages:876-878
Abstract: In this letter, evidence will be given for an alternative random telegraph signal (RTS) mechanism in silicon-on-insulator (SOI) metal-oxide-semiconductor transistors (MOSTs). It will be demonstrated that anomalous RTS behavior is observed in floating-film operated SOI nMOSTs. The experimental results strongly suggest that the origin of the drain current switching is related to trapping of holes, most likely by a defect center in the Si overlayer. This is in contrast to the normal RTSs which are caused by electron trapping by an interface near-oxide trap.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science