Title: Impact of process conditions on interface and high-kappa trap density studied by variable T-charge-T-discharge charge pumping ((VTCP)-C-2)
Authors: Zahid, M. B ×
Degraeve, R
Zhang, J. F
Groeseneken, Guido #
Issue Date: Sep-2007
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:1951-1955
Abstract: In this paper we use an improved way to measure electrical traps in Hf-based dielectrics by using Variable T,harg-Tdischarge Charge Pumping ((VTCp)-Cp-2). By independently controlling the pulse low and high level timings, we are able to clearly separate the traps in the interfacial SiO2 from the traps in the High-K layer, independently of the process conditions and Hf-concentration. The results show that the trap density varies by two orders of magnitude for the samples used in this work, indicating the importance of process optimization.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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