Title: Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
Authors: Rafi, J. M ×
Simoen, E
Mercha, A
Hayama, K
Campabadal, F
Ohyama, H
Claeys, Corneel #
Issue Date: Sep-2007
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2081-2084
Abstract: The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science