Title: Very low-temperature (250-degrees-c) epitaxial-growth of silicon by glow-discharge of silane
Authors: Baert, K ×
Symons, J
Vandervorst, Wilfried
Vanhellemont, J
Caymax, M
Poortmans, J
Nijs, Johan
Mertens, R #
Issue Date: Dec-1987
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:51 issue:23 pages:1922-1924
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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