ITEM METADATA RECORD
Title: The importance of the internal bulk-source potential on the low-temperature kink in nmosts
Authors: Deferm, L ×
Simoen, E
Claeys, Corneel #
Issue Date: Jun-1991
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:38 issue:6 pages:1459-1466
Abstract: In this paper the kink occurring at low temperatures in the I(DS)-V(DS) curves of NMOS transistors is explained by the direct correlation between the current injected into the source, the internal bulk potential, and the resulting change in threshold voltage. A semi-two-dimensional analytical model is derived for calculating the influence of the multiplication current from room temperature down to liquid helium temperature.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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