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Title: Hydrogen induced positive charge in Hf-based dielectrics
Authors: Zhao, C.Z. ×
Zhang, J.F.
Zahid, M.B.
Efthymiou, E.
Lu, Yan
Hall, S.
Peaker, A.R.
Groeseneken, Guido
Pantisano, L.
Degraeve, R.
De Gendt, Stefan
Heyns, Marc #
Issue Date: Sep-2007
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2354-2357
Abstract: This work investigates the anneal-induced positive charge in Hf-based dielectrics. It is found that anneal in forming gas produces substantially more positive charge than that in N-2 at 500 degrees C, indicating that hydrogen is a reactant for the positive charging. Positive charging is thermally accelerated and can occur in both HfO2 and Hf-silicates. Nitridation of either interfacial layer or whole dielectric stack enhances the positive charging significantly. These positive charges have a large sample-to-sample variation and are stable. For the first time, both mobile and fixed charges are simultaneously observed for Hf-stacks.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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