Journal of Applied Physics vol:70 issue:2 pages:708-719
The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth x(j) < 100 nm) with interface concentrations C(int) close to the solid solubility of the respective dopant in Si (C(int) > 3 x 10(20) cm-3 for As; (C(int) > 8 x 10(19) cm-3 for B) were obtained with RTP. For FA above 800-degrees-C, the diffusion of B from CoSi2 into Si results in a drop of C(int) < 2 x 10(19) cm-3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (almost-equal-to 1 nA/ cm2) and contact resistances ( 2-5 x 10(-7) OMEGA cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.