Title: Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon
Authors: Simoen, E ×
Debackker, K
Claeys, Corneel
Clauws, P #
Issue Date: May-1992
Publisher: Minerals metals materials soc
Series Title: Journal of electronic materials vol:21 issue:5 pages:533-541
Abstract: In this paper, the application of standard capacitance DLTS to high-resistivity (HR) silicon is investigated both theoretically and experimentally. As will be demonstrated, typical artefacts occur, which are related to the low doping density of the material (order of a few times 10(11) to 10(12) cm-3). The high series resistance of a HR-Si diode gives rise to the so-called Q-effect, yielding a reduction of the DLTS peak amplitude, which is particularly pronounced at room temperature and for p-type material. A second effect is the occurrence of non-negligible re-emission during the filling pulse, which causes the Arrhenius plot to deviate from a straight line and is particularly important for repulsive trapping centres. Methods will be discussed to reduce or correct for these phenomena. They will be illustrated by the practical example of the interstitial Fe donor-level in p-type HR-Si.
ISSN: 0361-5235
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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