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Title: Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor field-effect transistors
Authors: Lukyanchikova, P ×
Petrichuk, MV
Garbar, N
Simoen, E
Claeys, Cor #
Issue Date: Dec-1997
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:71 issue:26 pages:3874-3876
Abstract: In this letter, evidence is given for a new class of random telegraph signals (RTSs) in submicron n-metal-oxide-semiconductor field-effect transistors (n-MOSFETs). These two-level fluctuations not only occur when the MOSFET is biased in linear operation but also when it is operated in the source or drain-substrate diode mode. A detailed investigation of the RTS parameters. i.e., the amplitude, the emission, and the capture time constants, reveal a close correlation with the current through the forward biased drain- (or source-) substrate diode. At the same time, from the substrate bias dependence of the trap characteristics, it is inferred that it behaves like a near-interface oxide trap. From this, it is concluded that the most likely position is along the channel width perimeter, at the isolation edges of the transistors and close to the source or drain junction. (C) 1997 Academic Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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