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Title: Low-frequency noise behavior of high-energy electron-irradiated si n(+)p junction diodes
Authors: Dubuc, Jp ×
Simoen, E
Vasina, P
Claeys, Cor #
Issue Date: Jun-1995
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:31 issue:12 pages:1016-1018
Abstract: The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n(+)p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics, it is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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