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Title: High-performance deep submicron ge pMOSFETs with halo implants
Authors: Nicholas, Gareth ×
De Jaeger, Brice
Brunco, David P.
Zimmerman, Paul
Eneman, Geert
Martens, Koen
Meuris, Marc
Heyns, Marc #
Issue Date: Sep-2007
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:54 issue:9 pages:2503-2511
Abstract: Ge pMOSFETs with HfO2 gate dielectric and gate lengths down to 125 nm are fabricated in a Si-like process. Long-channel hole mobilities exceed the universal curve for Si by more than 2.5 times for vertical effective fields as large as I MV/cm. The mobility enhancement is found to be relevant at submicron gate lengths, and a drive current of 1034 mu A/mu m is achieved for L = 125 nm at V-G - V-T = V-D = -1.5 V. The introduction of halo implants allows significantly improved control of short-channel effects, with approximately three orders of magnitude reduction in source junction OFF-current. VT rolloff and drain-induced barrier lowering are reduced from 207 mV and 230 mV/V to 36 mV and 54 mV/V, respectively, for the highest n-well dose investigated. Four key logic benchmarking metrics are used to demonstrate that Ge is able to outperform Si down to the shortest investigated gate length, with an almost twofold improvement in intrinsic gate delay. ION = 722 mu A/mu m is demonstrated for I-OFF = 11nA/mu m at a power supply voltage of - 1.5 V, when evaluating from the source.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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