Title: Performance and reliability of strained-silicon nMOSFETs with SiN cap layer
Authors: Giusi, Gino ×
Crupi, Felice
Simoen, Eddy
Eneman, Geert
Jurczak, Malgorzata #
Issue Date: Jan-2007
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:54 issue:1 pages:78-82
Abstract: A complete comparison of performance and reliability between polysilicon gate/SiON oxide nMOSFETs with and without SiN cap layer is presented. The uniaxial tensile strain induced by the cap layer causes an improvement in the channel current drive capability without degrading the noise performance. The gain in the transconductance, for the strained devices, was found to decrease for increasing channel lengths and for higher channel fields. Similar robustness against hot carrier stress, bias-temperature instability, and time to breakdown were found between strained and unstrained-silicon devices, confirming the advantages.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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