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Title: Selective si epitaxial-growth by plasma-enhanced chemical vapor-deposition at very low-temperature
Authors: Baert, K ×
Deschepper, P
Poortmans, J
Nijs, Johan
Mertens, R #
Issue Date: Jan-1992
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:60 issue:4 pages:442-444
Abstract: A rf-plasma chemical vapor deposition process for selective epitaxial Si growth from SiH4 and SiF4 at a deposition temperature of 300-400-degrees-C is described. Selective epitaxial growth is obtained as a balance of deposition precursors versus etching by F species. Also, the results indicate that a high H-surface coverage is not essential to deposit crystalline Si films by very low temperature rf-plasma chemical vapor deposition. P-doped films with a mobility of 80 cm2/V s and a carrier concentration of 3 x 10(18) cm-3 are reported.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

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