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Title: Gate-length dependence of the low-frequency noise overshoot in partially depleted soi n-mosfets
Authors: Simoen, E ×
Claeys, Cor #
Issue Date: Nov-1993
Publisher: Pergamon-elsevier science ltd
Series Title: Solid state communications vol:88 issue:7 pages:507-508
Abstract: This letter investigates the effective gate-length L(eff) dependence of the low-frequency noise overshoot in partially-depleted Silicon-on-Insulator n-MOSFET's. It will be demonstrated that the noise overshoot amplitude is proportional to 1/L(eff) and to the reciprocal noise frequency 1/f. The noise overshoot position is a linear function of the saturation voltage. These findings will be discussed in view of a recently developed model for the noise overshoot.
ISSN: 0038-1098
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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