Solid state communications vol:88 issue:7 pages:507-508
This letter investigates the effective gate-length L(eff) dependence of the low-frequency noise overshoot in partially-depleted Silicon-on-Insulator n-MOSFET's. It will be demonstrated that the noise overshoot amplitude is proportional to 1/L(eff) and to the reciprocal noise frequency 1/f. The noise overshoot position is a linear function of the saturation voltage. These findings will be discussed in view of a recently developed model for the noise overshoot.