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Title: Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Authors: Delabie, Annelies ×
Bellenger, Florence
Houssa, Michel
Conard, Thierry
Van Elshocht, Sven
Caymax, Matty
Heyns, Marc
Meuris, Marc #
Issue Date: Aug-2007
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:91 issue:8 pages:082904-1-082904-3
Article number: 082904
Abstract: In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have deposited high-k dielectric layers on GeO2, grown at 350-450 degrees C in O-2. ZrO2, HfO2, and Al2O3 were deposited by atomic layer deposition (ALD). GeO2 and ZrO2 or HfO2 intermix during ALD, together with partial reduction of Ge4+. Almost no intermixing or reduction occurs during Al2O3 ALD. Capacitors show well-behaved capacitance-voltage characteristics on both n- and p-Ge, indicating efficient passivation of the Ge/GeOx interface. The density of interface states is typically in the low to mid-10(11) cm(-2) eV(-1) range, approaching state-of-the-art Si/HfO2/matal gate devices.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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