Title: On the different time-dependence of interface trap generation and charge trapping during hot carrier degradation in cmos
Authors: Bellens, R ×
Groeseneken, Guido
Heremans, Paul
Maes, He #
Issue Date: Sep-1992
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:19 issue:1-4 pages:465-468
Abstract: In this paper, both I-V and charge pumping (CP) measurements are used to study the time dependence of the hot carrier degradation of n- and pMOSFET's under various stress conditions. It will be shown that for the interface trap generation, in all cases a power law relationship is obtained, while the build-up of positive and negative charge behaves logarithmically with time. The time dependence of the degradation monitored with I-V will of course be determined by the dominant degradation mechanism. In this way, the duality between the degradation of n- and pMOSFET's is confirmed. Also the relevance of these time dependencies for dynamic degradation is treated.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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