In this paper, both I-V and charge pumping (CP) measurements are used to study the time dependence of the hot carrier degradation of n- and pMOSFET's under various stress conditions. It will be shown that for the interface trap generation, in all cases a power law relationship is obtained, while the build-up of positive and negative charge behaves logarithmically with time. The time dependence of the degradation monitored with I-V will of course be determined by the dominant degradation mechanism. In this way, the duality between the degradation of n- and pMOSFET's is confirmed. Also the relevance of these time dependencies for dynamic degradation is treated.