Title: Hole trapping and hot-hole induced interface trap generation in mosfets at different temperatures
Authors: Vandenbosch, G. ×
Groeseneken, Guido
Heremans, Paul
Heyns, Marc
Maes, H.E. #
Issue Date: Sep-1992
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:19 issue:1-4 pages:477-480
Abstract: pMOSFET's have been subjected to homogeneous injection of substrate hot holes at 295 K and 77 K. For identical injection conditions, hole gate currents are smaller at 77 K than at room temperature. The trapping level is found to increase strongly at low temperature, and does not exhibit a strong field dependence. For equal numbers of injected holes, interface trap generation is larger at 77 K than at 295 K. It is enhanced at lower oxide fields. The relation between trapped holes and interface traps is also field and temperature dependent. This generation enhancement has not been found in low-temperature irradiation experiments.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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