pMOSFET's have been subjected to homogeneous injection of substrate hot holes at 295 K and 77 K. For identical injection conditions, hole gate currents are smaller at 77 K than at room temperature. The trapping level is found to increase strongly at low temperature, and does not exhibit a strong field dependence. For equal numbers of injected holes, interface trap generation is larger at 77 K than at 295 K. It is enhanced at lower oxide fields. The relation between trapped holes and interface traps is also field and temperature dependent. This generation enhancement has not been found in low-temperature irradiation experiments.