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Title: Irradiation induced lattice defects in In0.53Ga0.47As pin photodiodes
Authors: Kudou, T ×
Ohyama, H
Vanhellemont, J
Simoen, E
Claeys, Cor
Takami, Y
Fujii, A
Sunaga, H #
Issue Date: 1997
Publisher: Transtec publications ltd
Series Title: Defects in semiconductors - icds-19, pts 1-3 vol:258-2 pages:1217-1222
Abstract: Results are presented of an extended study on the induced lattice defects and their effects on the degradation of In0.53Ga0.47As pin photodiodes, subjected to a 20-MeV alpha ray irradiation. The difference in radiation damage between 1-MeV fast neutrons and 1-MeV electrons is discussed taking into account the energy transfer. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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