Irradiation induced lattice defects in In0.53Ga0.47As pin photodiodes
Kudou, T × Ohyama, H Vanhellemont, J Simoen, E Claeys, Cor Takami, Y Fujii, A Sunaga, H #
Transtec publications ltd
Defects in semiconductors - icds-19, pts 1-3 vol:258-2 pages:1217-1222
Results are presented of an extended study on the induced lattice defects and their effects on the degradation of In0.53Ga0.47As pin photodiodes, subjected to a 20-MeV alpha ray irradiation. The difference in radiation damage between 1-MeV fast neutrons and 1-MeV electrons is discussed taking into account the energy transfer. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.