IEEE Electron Device Letters vol:28 issue:4 pages:288-291
The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/f(gamma) type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering.