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Title: Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
Authors: Guo, W ×
Nicholas, Gareth
Kaczer, B
Todi, R. M
De Jaeger, B
Claeys, Corneel
Mercha, A
Simoen, E
Cretu, B
Routoure, J. -M
Carin, R #
Issue Date: Apr-2007
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:28 issue:4 pages:288-291
Abstract: The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/f(gamma) type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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