Title: High-performance 5.2GHz LNA with on-chip inductor to provide ESD protection
Authors: Leroux, Paul ×
Steyaert, Michel #
Issue Date: Mar-2001
Publisher: Institution of Electrical Engineers
Series Title: Electronics Letters vol:37 issue:7 pages:467-469
Abstract: A new ESD protection methodology for high-frequency CMOS LNAs is introduced. An on-chip inductor is employed to drain off the hazardous ESD charge while tuning out the harmful parasitic input capacitance. A 5.2GHz LNA has been designed. attaining high RF performance while providing a high level of ESD protection.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

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