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Title: Origin and repartition of the oxide fixed charges generated by electrical stress in memory tunnel oxide
Authors: Bernardini, S ×
Masson, P
Houssa, Michel
Lalande, F #
Issue Date: May-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:84 issue:21 pages:4251-4253
Abstract: A method is proposed to determine the origin and the spatial oxide fixed charge repartition in memory tunnel oxide from Fowler-Nordheim current measurements after electrical stress. The Poisson equation resolution in the dielectric layer is required to account for the nonsymmetric tunneling barrier deformation, resulting from charges generated within the dielectric layer. From current-voltage characteristics measurements and simulations, we have determined the spatial distribution of the oxide fixed charges within the dielectric layer of metal/SiO2/metal structures. In addition, the kinetics of the oxide charge generation can be explained by a dispersive hydrogen transport model. (C) 2004 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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