Title: Analysis of poststress effects in passivated mosfets after hot-carrier stress
Authors: Deschrijver, E ×
Heremans, Paul
Bellens, R
Groeseneken, Guido
Maes, He #
Issue Date: Oct-1991
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:15 issue:1-4 pages:437-440
Abstract: Passivated n-channel transistors of different technologies still show interface trap density increases after termination of hot-carrier stress. A systematic study of this effect and its dependence on various parameters was made, using the Charge-Pumping technique. A tentative model is presented, that explains the observed phenomena.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science