Title: Influence of hot-carrier stress on the kink hysteresis behavior of nmosts operating at liquid-helium temperatures
Authors: Simoen, E ×
Dierickx, B
Gao, Mh
Claeys, Corneel #
Issue Date: Oct-1991
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:15 issue:1-4 pages:457-460
Abstract: In this paper the hot-carrier degradation behaviour of Si NMOST's at 4.2K is reported. It is demonstrated that both reversible and irreversible changes are generated, which strongly depend on the stressing conditions. The unexpected reduction in threshold voltage and the anomalous increase in substrate current often observed after 4.2K stress in p-well devices is explained by considering the charging of the substrate. Similar effects are observed in SOI NMOST's stressed at liquid helium temperatures (LHT).
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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