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Title: Heavily phosphorus-doped epitaxial si deposited by low-temperature plasma-enhanced chemical vapor-deposition
Authors: Baert, K ×
Vanhellemont, J
Vandervorst, Wilfried
Nijs, Johan
Konagai, M #
Issue Date: Aug-1991
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:59 issue:7 pages:797-799
Abstract: Heavily P-doped Si layers have been grown at very low temperature (< 600-degrees-C) by rf plasma chemical vapor deposition. Films grown by vapor phase epitaxy (VPE) or solid phase epitaxy (SPE) are compared. By VPE growth, fully electrically activated films with a P concentration in excess of 10(21) cm-3 and steep doping profiles (less-than-or-equal-to 4 nm/dec) were obtained. SPE films are not fully activated and an anomalously fast P diffusion is observed during the crystallization at 600-degrees-C. On the other hand, the Hall mobility of VPE films is significantly lower than that of SPE films.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

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