Title: Thermal-stability of cosi2 on submicron polycrystalline silicon lines
Authors: Schreutelkamp, Rj
Deweerdt, B
Verbeeck, R
Maex, Karen #
Issue Date: Sep-1992
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:19 issue:1-4 pages:665-668
Abstract: The thermal stability of CoSi2 layers on undoped, B- and As-doped, submicron-sized polycrystalline Si lines has been investigated. It is found that the highest thermal stability is obtained for undoped poly-Si lines. The thermal stability of the silicide layers on As- or B-doped lines is largely improved if an additional Ge implant is performed prior to Co sputtering which amorphizes the complete Si layer which is consumed during silicidation.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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