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Title: Alternative random telegraph signal mechanisms in silicon-on-insulator mos-transistors
Authors: Simoen, E ×
Claeys, Cor #
Issue Date: Aug-1993
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:22 issue:1-4 pages:185-188
Abstract: This paper discusses new Random Telegraph Signal (RTS) mechanisms which are typical for Silicon-on-Insulator MOST's. Apart from the standard RTS's which are re ted to the trapping of a single channel carrier by an interface-near oxide trap, there are other causes of RTS-like fluctuations in the drain current of a SOI transistor. It is shown that these phenomena find their origin in trapping by a defect residing either in the thin Si film or in the back oxide. Finally, RTS's can also be rendered visible in thin-film, fully-depleted devices by applying a back-gate bias, i.e. by front-back coupling.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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