Title: Polycrystalline si thin-film transistors using thermally crystallized low-pressure chemical vapor-deposition a-si films for the channel layer and p-doped microcrystalline si films for the source and drain layers
Authors: Kobayashi, K ×
Nijs, Johan
Mertens, R #
Issue Date: Mar-1989
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:65 issue:6 pages:2541-2546
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science