Journal of vacuum science & technology b vol:9 issue:6 pages:2784-2787
Using an optical fiber thermometer, wafer temperature was measured during implantation at elevated temperatures. The wafer was mounted on a chuck which was resistively heated to 400-degrees-C. Ar was implanted at an energy of 200 keV and a current in the range of 0-750-mu-A. Due to poor thermal contact between the chuck and the wafer, wafer temperature could be different from chuck temperature. The wafer temperature varied from approximately 300 to 500-degrees-C as a function of implantation current. The wafer temperature was also dependent on the optical properties of the wafer. A model was developed which took the optical properties of the wafer and the chuck into account.