Title: Influence of poststress effects on the dynamic hot-carrier degradation behavior of passivated n-channel mosfet
Authors: Bellens, R ×
Deschrijver, E
Groeseneken, Guido
Heremans, Paul
Maes, He #
Issue Date: Jul-1992
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:13 issue:7 pages:357-359
Abstract: Although it is commonly accepted that nMOS transistors behave quasi-statically under dynamic stress conditions, some deviating results have been obtained, particularly when a net positive charge is built up in the oxide during the degradation. In this letter, it will be shown that the observed phenomenon is due to a post-stress effect and can be explained without the need for any fast transient effects. Taking this post-stress effect into account, the degradation under dynamic stress conditions, which favor hole injection, can be predicted based on static degradation measurements.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science