Evidence of different conduction mechanisms in accumulation-mode p-channel soi mosfets at room and liquid-helium temperatures

Rotondaro, Alp; Magnusson, Uk; Claeys, Cor; Flandre, D; Terao, A; Colinge, Jp

doi:10.1109/16.202784

Evidence of different conduction mechanisms in accumulation-mode p-channel soi mosfets at room and liquid-helium temperatures

Author:

Rotondaro, Alp

Magnusson, Uk ; Claeys, Cor ; Flandre, D ; Terao, A ; Colinge, Jp

Keywords:

thin-film, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, THIN-FILM, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI are experimentally extracted at room and liquid-helium temperatures. A deep-depletion transient effect is observed to play an important role when one of the interfaces is in inversion, even at room temperature. An intuitive physical interpretation is given for the suppression of some current components at liquid-helium temperatures. In addition, a simple model for calculating the silicon-film thickness and the doping level is presented.