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Title: Integration of cmos-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
Authors: Dierickx, B ×
Wouters, D
Willems, G
Alaerts, A
Debusschere, I
Simoen, E
Vlummens, J
Akimoto, H
Claeys, Cor
Maes, Herman
Hermans, L
Heijne, Ehm
Jarron, P
Anghinolfi, F
Campbell, M
Pengg, Fx
Aspell, P
Bosisio, L
Focardi, E
Forti, F
Kashigin, S
Mekkaoui, A
Habrard, Mc
Sauvage, D
Delpierre, P #
Issue Date: Aug-1993
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Nuclear Science vol:40 issue:4 pages:753-758
Abstract: A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm2. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.
URI: 
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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