Title: Exploiting si/cosi2/si heterostructures grown by mesotaxy
Authors: White, Ae ×
Short, Kt
Maex, Karen
Hull, R
Hsieh, Yf
Audet, Sa
Goossen, Kw
Jacobson, Dc
Poate, Jm #
Issue Date: Jul-1991
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms vol:59 pages:693-697
Abstract: Buried single-crystal silicide layers in silicon formed by ion implantation and annealing have many potential applications (some more practical than others!) including metal base transistors (operating at 77 K), buried collector contacts for bipolar transistors, and buried groundplanes for ultrahigh-speed electronics. Fabrication of prototype devices is complicated by the presence of defects in the overlayer silicon, but preliminary results are reported.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science