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Title: Electrically active, ion-implanted boron at the solubility limit in silicon
Authors: Liefting, Jr ×
Schreutelkamp, Rj
Vanhellemont, J
Vandervorst, Wilfried
Maex, Karen
Custer, Js
Saris, Fw #
Issue Date: Aug-1993
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:63 issue:8 pages:1134-1136
Abstract: For 30 keV B implants in Si, doses above 1.5 X 10(14) B/cm2 will lead to dislocation formation during a subsequent 900-degrees-C anneal to make the B electrically active. Although dislocations are avoided for doses < 1.5 x 10(14) B/cm, the B concentration is only approximately 1 X 10(19) B/cm3, a factor of 4-5 lower than the solid solubility of B in Si at 900-degrees-C. Using multiple implant/anneal steps, we demonstrate here that implanted, electrically active B can be introduced up to the solid solubility limit while avoiding dislocation formation.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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