Title: Materials aspects of silicides for advanced technologies
Authors: Maex, Karen # ×
Issue Date: Nov-1991
Publisher: Elsevier science bv
Series Title: Applied surface science vol:53 pages:328-337
Abstract: The scaling down of device lateral dimensions imposes severe restrictions on the depth of shallow junctions and on the length of poly-Si runners. In this report an overview is given on the current understanding of the formation of self-aligned silicides, of defect generation and annihilation during silicidation, of silicidation of narrow lines and their thermal stability, and also on the recent evolutions in the formation of buried and surface epitaxially aligned CoSi2.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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