IEEE Transactions on electron devices vol:39 issue:2 pages:458-&
In the above paper 1, the principal damage caused to n-MOSFET's during stress at low gate biases is claimed to be neutral electron trap generation in the gate oxide. These traps can supposedly be filled by injected electrons, when the transistor is biased at large drain and gate biases. When the generated electron traps are filled with electrons, a large degradation of current characteristics is observed. We, however, infer that no experimental evidence can be found, neither in the above paper 1, nor in earlier published work, to confirm this hypothesis. Using the data presented in the above paper 1 as well as results of ourselves and other workers, we show that the generation of neutral traps by injected holes is negligible. Neutral electron trap generation can, however, occur in MOSFET's when large oxide fields occur during operation.