ITEM METADATA RECORD
Title: Electrical and optical bandgaps of gexsi1-x strained layers
Authors: Jain, Sc ×
Poortmans, J
Iyer, Ss
Loferski, Jj
Nijs, Johan
Mertens, R
Vanoverstraeten, R #
Issue Date: Dec-1993
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:40 issue:12 pages:2338-2343
Abstract: Theoretical and experimental evidence is presented to show that the effective mass of holes is reduced due to strain in the GexSil-x layers grown on Si(100) substrate. In this paper, it is shown theoretically that due to this change in the hole effective mass, the reduction of bandgap of a heavily doped (i.e., more than similar to 1 X 10(18) cm(-3)) GexSil-x strained layer base determined by measuring the collector current of the heterostructure bipolar transistor is smaller than the bandgap reduction obtained from optical measurements. When uncertainties in the value of the mass and in the experimental results are taken into account, agreement between the theoretical and experimental bandgap reduction values is satisfactory. A significant result obtained in the paper is that a high Ge and doping concentrations in the base suppress the collector current and make it smaller than the value that would be obtained if heavy doping effects are neglected.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science