Title: Formation of ultrathin cosi2 films using a 2-step limited reaction process
Authors: Schreutelkamp, Rj ×
Coppye, W
Debosscher, W
Vanmeirhaeghe, R
Vanmeirhaeghe, L
Vanhellemont, J
Deweerdt, B
Lauwers, A
Maex, Karen #
Issue Date: Dec-1993
Publisher: Materials research society
Series Title: Journal of materials research vol:8 issue:12 pages:3111-3121
Abstract: The formation of ultrathin (less-than-or-equal-to 20 nm) and smooth CoSi2 layers on c-Si substrates has been studied by using a one- and a two-step RTP silicidation method. Pinhole-free silicide layers with a thickness down to approximately 10-12 nm were formed on n-, n+, and p+ crystalline Si substrates in the one-step RTP process by sputtering of Co films as thin as 4 nm and subsequent silicidation at 750-degrees-C for 5 or 30 s. The two-step RTP silicidation method is based on the consumption of only a small fraction of a thick sputtered Co film to form Co2Si or CoSi during a first RTP step at 400-500-degrees-C. A selective etch follows to remove the unreacted Co film. During a second, higher temperature, RTP step CoSi2 is formed. Pinhole-free and smooth CoSi2 films with a thickness down to 20 nm were formed in this way on both n+ and p+ monocrystalline Si substrates.
ISSN: 0884-2914
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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