Title: Hrem study of low-temperature deposited pecvd silicon layers on (001) silicon substrates
Authors: Vanhellemont, J ×
Baert, K
Symons, J
Nijs, Johan
Mertens, R #
Issue Date: 1988
Publisher: Iop publishing ltd
Series Title: Institute of physics conference series issue:93 pages:95-96
Abstract: It is shown that HREM is a powerful technique to study epitaxial silicon growth on (001) silicon substrates at temperatures as low as 250-degrees-C. HREM proves that the cleaning procedure of the substrate before film deposition plays a crucial role for the final film quality.
ISSN: 0951-3248
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

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