Hrem study of low-temperature deposited pecvd silicon layers on (001) silicon substrates
Vanhellemont, J × Baert, K Symons, J Nijs, Johan Mertens, R #
Iop publishing ltd
Institute of physics conference series issue:93 pages:95-96
It is shown that HREM is a powerful technique to study epitaxial silicon growth on (001) silicon substrates at temperatures as low as 250-degrees-C. HREM proves that the cleaning procedure of the substrate before film deposition plays a crucial role for the final film quality.