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Title: Computer simulation of gettering induced oxygen redistribution in SOI structures
Authors: Litovchenko, VG ×
Efremov, AA
Claeys, Cor #
Issue Date: 1999
Publisher: Trans tech-scitec publications ltd
Series Title: Solid state phenomena vol:70 pages:273-278
Abstract: Physical mechanisms of oxygen transport and precipitation in silicon during the synthesis of a buried oxide layer are reviewed. Different effects caused by interaction of weakly bonded oxygen with mobile point defects and static defect complexes are analyzed. As a result, the possibilities to control the evolution of the spatial distribution of implanted oxygen by means of gettering and defect engineering are proposed and validated by computer simulations based on a kinetic quasi-chemical description. Special attention is given to carbon induced gettering mechanisms involved in buried oxide synthesis known as Low-Dose Approach Combined with Defect Engineering (LDACODE). SIMS profiling data together with the results of computer simulations show a rather complicated autocatalytic behavior of carbon and an important role of the carbon-vacancy and carbon-oxygen complexes in oxygen accumulation. Some effects in the early stage kinetics of oxygen redistribution are revealed and discussed.
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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