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Title: Radiation damage of In0.53Ga0.47As photodiodes by high energy particles
Authors: Ohyam, H ×
Kudou, T
Simoen, E
Claeys, Cor
Takami, Y
Sunaga, H #
Issue Date: Jul-1999
Publisher: Kluwer academic publ
Series Title: Journal of materials science-materials in electronics vol:10 issue:5-6 pages:403-405
Abstract: The performance degradation of In0.53Ga0.47As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 10(10) to 10(13) cm(-2), is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.
URI: 
ISSN: 0957-4522
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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