Radiation damage of In0.53Ga0.47As photodiodes by high energy particles
Ohyam, H × Kudou, T Simoen, E Claeys, Cor Takami, Y Sunaga, H #
Kluwer academic publ
Journal of materials science-materials in electronics vol:10 issue:5-6 pages:403-405
The performance degradation of In0.53Ga0.47As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 10(10) to 10(13) cm(-2), is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.