Title: Thin-film lambda similar to 3.7 mu m 'W' laser released from InAs substrate
Authors: Song, L ×
Degroote, S
Vurgaftman, I
Myer, JR
Heremans, Paul #
Issue Date: Oct-2004
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:40 issue:21 pages:1342-1344
Abstract: A mid-infrared type-II 'W' laser fabricated by releasing the epitaxial film from its original InAs substrate is reported. The process exploits the extreme selectivity between GaSb and InAs when etched by hydrochloric acid. The detached film is coated with an Si3N4 optical cladding layer, grafted to a foreign GaAs substrate, and cleaved into laser bars. For epitaxial-side-up mounting, the device operates to 70 K, with a low threshold (similar or equal to 150 W/cm(2)) when pumped with the maximum available CW power of 320 mW from a 980 nm laser diode.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science